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Products
HN1C01FU-Y(T5L,F,T
Toshiba Semiconductor and Storage
Voltage - Collector Emitter Breakdown (Max)50VVce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mATransistor Type2 NPN (Dual)Supplier Device PackageUS6Series-Power - Max200mWPackagingCut Tape (CT)Package
| Voltage - Collector Emitter Breakdown (Max) | 50V |
|---|---|
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Transistor Type | 2 NPN (Dual) |
| Supplier Device Package | US6 |
| Series | - |
| Power - Max | 200mW |
| Packaging | Cut Tape (CT) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Other Names | HN1C01FU-Y(T5LFTCT |
| Operating Temperature | 125°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Part Number | HN1C01FU-Y(T5L,F,T |
| Frequency - Transition | 80MHz |
| Expanded Description | Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 80MHz 200mW Surface Mount US6 |
| Description | TRANS 2NPN 50V 0.15A US6 |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 6V |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Current - Collector (Ic) (Max) | 150mA |