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Products
RN1103CT(TPL3)
Toshiba Semiconductor and Storage
Voltage - Collector Emitter Breakdown (Max)20VVce Saturation (Max) @ Ib, Ic150mV @ 250µA, 5mATransistor TypeNPN - Pre-BiasedSupplier Device PackageCST3Series-Resistor - Emitter Base (R2) (Ohms)22kResi
| Voltage - Collector Emitter Breakdown (Max) | 20V |
|---|---|
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
| Transistor Type | NPN - Pre-Biased |
| Supplier Device Package | CST3 |
| Series | - |
| Resistor - Emitter Base (R2) (Ohms) | 22k |
| Resistor - Base (R1) (Ohms) | 22k |
| Power - Max | 50mW |
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Other Names | RN1103CT(TPL3)TR |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Part Number | RN1103CT(TPL3) |
| Frequency - Transition | - |
| Expanded Description | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 20V 50mA 50mW Surface Mount CST3 |
| Description | TRANS PREBIAS NPN 0.05W CST3 |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
| Current - Collector Cutoff (Max) | 500nA |
| Current - Collector (Ic) (Max) | 50mA |