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2SC2229-Y(T6ONK1FM
Toshiba Semiconductor and Storage
Voltage - Collector Emitter Breakdown (Max)150VVce Saturation (Max) @ Ib, Ic500mV @ 1mA, 10mATransistor TypeNPNSupplier Device PackageTO-92MODSeries-Power - Max800mWPackagingBulkPackage / CaseTO-226-3
| Voltage - Collector Emitter Breakdown (Max) | 150V |
|---|---|
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Transistor Type | NPN |
| Supplier Device Package | TO-92MOD |
| Series | - |
| Power - Max | 800mW |
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Other Names | 2SC2229YT6ONK1FM |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Part Number | 2SC2229-Y(T6ONK1FM |
| Frequency - Transition | 120MHz |
| Expanded Description | Bipolar (BJT) Transistor NPN 150V 50mA 120MHz 800mW Through Hole TO-92MOD |
| Description | TRANS NPN 50MA 150V TO226-3 |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Current - Collector (Ic) (Max) | 50mA |